Influence of metal-graphene contact on the operation and scalability of graphene field-effect transistors
- Pei Zhao
- Qin Zhang
- et al.
- 2011
- IEEE T-ED
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Silicon nanowire tunnel FETs: Low-temperature operation and influence of high-k gate dielectric
- K. Moselund
- Mikael T. Björk
- et al.
- 2011
- IEEE T-ED
Noniterative compact modeling for intrinsic carbon-nanotube FETs: Quantum capacitance and ballistic transport
- Lan Wei
- David J. Frank
- et al.
- 2011
- IEEE T-ED
Analysis of electron mobility in inversion-mode Al2O 3InxGa1-xAs MOSFETs
- Weike Wang
- James C. M. Hwang
- et al.
- 2011
- IEEE T-ED
The vibrating body transistor
- Daniel Grogg
- Adrian Mihai Ionescu
- 2011
- IEEE T-ED
Temperature dependence of the transconductance in ballistic III-V QWFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2011
- IEEE T-ED
One-dimensional thickness scaling study of phase change material (Ge 2Sb2Te5 using a pseudo 3-terminal device
- Sangbum Kim
- Byoung-Jae Bae
- et al.
- 2011
- IEEE T-ED
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Driving device comparison for phase-change memory
- Lin Li
- Kailiang Lu
- et al.
- 2011
- IEEE T-ED
Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage
- Sangbum Kim
- Byoungil Lee
- et al.
- 2011
- IEEE T-ED