Si/Si1-xGexValence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure
- Brian R. Bennett
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Transactions on Electron Devices
Publications
136 results at IEEE Transactions on Electron Devices
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- Thomas Vogelsang
- Masaaki Tomizawa
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
Investigation of the Impact Ionization in the Hydrodynamic Model
- Kamel Souissi
- Farouk Odeh
- et al.
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices