A Comprehensive Study of Hot-Carrier Instability in P- and N-Type Poly-SI Gated MOSFET’s
- Charles C.-H. Hsu
- Duen-Shun Wen
- et al.
- 1994
- IEEE Transactions on Electron Devices
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Nonquasi-Static Effects in Saturated Bipolar Circuits
- B.S. Wu
- C.T. Chuang
- et al.
- 1994
- IEEE Transactions on Electron Devices
Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
Investigation of the Impact Ionization in the Hydrodynamic Model
- Kamel Souissi
- Farouk Odeh
- et al.
- 1993
- IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices