Publications

136 results at IEEE Transactions on Electron Devices

A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- - Joachim N. Burghartz
  - Robert C. McIntosh
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- - Thomas Vogelsang
  - Masaaki Tomizawa
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Room Temperature 0.1 µm CMOS on SOI
- - Ghavam G. Shahidi
  - Carl A. Anderson
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- - Joachim N. Burghartz
  - Arturo O. Cifuentes
  - et al.
- 1994
- IEEE Transactions on Electron Devices
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- - C.W. Seabury
  - C.W. Farley
  - et al.
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- - J.J. Loferski
  - J. Nijs
  - et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- - D.J. Frank
  - S.E. Laux
  - et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz f_T Graded-Base SiGe HBT's
- - E.F. Crabbé
  - B.S. Meyerson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- - Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
The Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- - Scott R. Stiffler
  - Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices