Publications

2351 results at Applied Physics Letters

Fundamental chemical differences among P_b defects on (111) and (100) silicon
- - J.H. Stathis
  - L. Dori
- 1991
- Applied Physics Letters
I_cR products of tunnel junctions with depressed order parameter
- - J. Mannhart
  - P. Martinoli
- 1991
- Applied Physics Letters
Laser deposition of YBa₂Cu₃O_7-δ films using a pulsed oxygen source
- - A. Gupta
  - B.W. Hussey
- 1991
- Applied Physics Letters
High hydrogen concentrations produced by segregation into p⁺ layers in silicon
- - A.D. Marwick
  - G.S. Oehrlein
  - et al.
- 1991
- Applied Physics Letters
Quantum interference in ultrashort channel length silicon metal-oxide-semiconductor field-effect transistors
- - A. Hartstein
- 1991
- Applied Physics Letters
Magneto-optical characterization of YBa₂Cu₃O ₇ film uniformity
- - S.I. Raider
  - A. Gupta
  - et al.
- 1991
- Applied Physics Letters
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- - J.H. Stathis
  - J. Chapple-Sokol
  - et al.
- 1991
- Applied Physics Letters
Localized electrodeposition induced by Joule heat at a constriction
- - C. Julian Chen
- 1990
- Applied Physics Letters
Threshold reduction through photon recycling in semiconductor lasers
- - Yves B. Gigase
  - Christoph S. Harder
  - et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- - M.R. Melloch
  - N. Otsuka
  - et al.
- 1990
- Applied Physics Letters