Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition
- J. Batey
- E. Tierney
- 1986
- Journal of Applied Physics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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2353 results at Journal of Applied Physics
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration
- S.E. Babcock
- K.N. Tu
- 1986
- Journal of Applied Physics
Electron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Ar ion laser-assisted chemical etching of molybdenum foils in air
- G. Koren
- 1986
- Journal of Applied Physics
Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
- T.Y. Tan
- C.Y. Kung
- 1986
- Journal of Applied Physics
The measurement of effective complex refractive indices for selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1986
- Journal of Applied Physics
SiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
High-purity GaAs grown by molecular-beam epitaxy
- W.I. Wang
- R.F. Marks
- et al.
- 1986
- Journal of Applied Physics