High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operationV.P. KesanS. Subbanaet al.1991IEDM 1991
Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structureHon-Sum Wong1991IEDM 1991
Role of charge transport and trapping in the reliability of submicron polysilicon thin film transistorsFrank R. LibschCatherine Y. Wonget al.1991IEDM 1991