Low thermal budget antimony/phosphorus NMOS technology for CMOSD.L. HarameE. Ganinet al.1991IEDM 1991
Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 KL.K. WangJ. Seliskaret al.1991IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operationJohn D CresslerEmmanuel F Crabeet al.1991IEDM 1991