Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltagesSandip TiwariJeremy Burrougheset al.1991IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stressKeith A. JenkinsJ.D. Cressleret al.1991IEDM 1991
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delayJ. WarnockJ.D. Cressleret al.1991IEDM 1991
Low thermal budget antimony/phosphorus NMOS technology for CMOSD.L. HarameE. Ganinet al.1991IEDM 1991