High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
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13 results at IEDM 2006
Fundamental understanding and optimization of PBTI in nFETs with SiO 2/HfO2 gate stack
- E. Cartier
- B.P. Linder
- et al.
- 2006
- IEDM 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006