VIB-1 InGaAs Superconducting JFET's with Nb Electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
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IA-3 Potential Device Applications Using Photorefractive Materials
- Roger R. Dube
- 1989
- IEEE T-ED
On the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
IA-3 First Observation of Ballistic Holes in a p-Type THETA Device
- M. Heiblum
- K. Seo
- et al.
- 1988
- IEEE T-ED
The Effect of Extrinsic Base Encroachment on the Switch-On Transient of Advanced Narrow-Emitter Bipolar Transistors
- C.T. Chuang
- 1988
- IEEE T-ED
Junction Degradation in Bipolar Transistors and the Reliability Imposed Constraints to Scaling and Design
- Denny Duan-Lee Tang
- Edward Hackbarth
- 1988
- IEEE T-ED
IIB-1 Analysis of Picosecond and Subpicosecond MSM Photodiodes with Very Low Bias Voltage
- B.J. Van Zeghbroeck
- 1988
- IEEE T-ED
An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
Identification and Implication of a Perimeter Tunneling Current Component in Advanced Self-Aligned Bipolar Transistors
- Hackbarth LI, Edward
- Tze Chiang Chen
- 1988
- IEEE T-ED
High-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED