Junction Degradation in Bipolar Transistors and the Reliability Imposed Constraints to Scaling and Design
- Denny Duan-Lee Tang
- Edward Hackbarth
- 1988
- IEEE T-ED
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The Effect of Extrinsic Base Encroachment on the Switch-On Transient of Advanced Narrow-Emitter Bipolar Transistors
- C.T. Chuang
- 1988
- IEEE T-ED
IA-3 First Observation of Ballistic Holes in a p-Type THETA Device
- M. Heiblum
- K. Seo
- et al.
- 1988
- IEEE T-ED
Identification and Implication of a Perimeter Tunneling Current Component in Advanced Self-Aligned Bipolar Transistors
- Hackbarth LI, Edward
- Tze Chiang Chen
- 1988
- IEEE T-ED
An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
IVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
High-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED
An Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology
- G.P. Li
- Tak H. Ning
- et al.
- 1987
- IEEE T-ED
VA-6 Investigation of Stress Effects on the DC Characteristics of GaAs MESFET's Through the Use of Externally Applied Loads
- T.N. Jackson
- Jean-Claude Ramirez
- et al.
- 1987
- IEEE T-ED
IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED