Thermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
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2347 results at Applied Physics Letters
Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
- J. Bloch
- M. Heiblum
- et al.
- 1985
- Applied Physics Letters
High-speed electroplating of copper using the laser-jet technique
- R.J. Von Gutfeld
- D.R. Vigliotti
- 1985
- Applied Physics Letters
Doping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
Laser detection of diatomic products of plasma sputtering and etching
- R.E. Walkup
- Ph. Avouris
- et al.
- 1984
- Applied Physics Letters
Study of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
12-fs ultrashort optical pulse compression at a high repetition rate
- J.-M. Halbout
- D. Grischkowsky
- 1984
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Measurement of small elastic anisotropy in solids using laser-induced ultrasonic pulses
- A.C. Tam
- W.P. Leung
- 1984
- Applied Physics Letters