Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface
- Chin-An Chang
- M. Heiblum
- et al.
- 1981
- Applied Physics Letters
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2347 results at Applied Physics Letters
Two-carrier nature of interface-state generation in hole trapping and radiation damage
- S.K. Lai
- 1981
- Applied Physics Letters
Silicide films for archival optical storage
- K.N. Tu
- K.Y. Ahn
- et al.
- 1981
- Applied Physics Letters
Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- C.M. Serrano
- Chin-An Chang
- 1981
- Applied Physics Letters
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
Semimetallic InAs-GaSb superlattices to the heterojunction limit
- L.L. Chang
- N. Kawai
- et al.
- 1981
- Applied Physics Letters
Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- T.O. Sedgwick
- 1981
- Applied Physics Letters
Interferometric measurements with laser FM sidebands
- G.C. Bjorklund
- K. Jain
- et al.
- 1981
- Applied Physics Letters
Surface compositional modifications during O+2 bombardment of binary alloys
- Ming L. Yu
- Wilhad Reuter
- 1981
- Applied Physics Letters
Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
- B.A. Scott
- R.M. Plecenik
- et al.
- 1981
- Applied Physics Letters