Contact reaction between Si and rare earth metals
- R.D. Thompson
- B.Y. Tsaur
- et al.
- 1981
- Applied Physics Letters
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2344 results at Applied Physics Letters
Schottky barriers: An effective work function model
- J. Freeouf
- J. Woodall
- 1981
- Applied Physics Letters
Monoenergetic Cs+ source with increased brightness
- R.W. Dreyfus
- 1981
- Applied Physics Letters
Semimetallic InAs-GaSb superlattices to the heterojunction limit
- L.L. Chang
- N. Kawai
- et al.
- 1981
- Applied Physics Letters
Ge-GaAs superlattices by molecular beam epitaxy
- Chin-An Chang
- Armin Segmüller
- et al.
- 1981
- Applied Physics Letters
Annealing ambient: A useful probe for interface interactions in thin films
- Chin-An Chang
- 1981
- Applied Physics Letters
Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- C.M. Serrano
- Chin-An Chang
- 1981
- Applied Physics Letters
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
Diffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters
Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- T.O. Sedgwick
- 1981
- Applied Physics Letters