Sidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters
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307 results at IEEE Electron Device Letters
Monte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K
- Steven E. Laux
- M.V. Fischetti
- 1988
- IEEE Electron Device Letters
A New Failure Mode of Radiation-Induced Soft Errors in Dynamic Memories
- T.V. Rajeevakumar
- Nicky C. C. Lu
- et al.
- 1988
- IEEE Electron Device Letters
Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
Thin-Film Transistors Incorporating a Thin, High-Quality PECVD SiO2 Gate Dielectric
- D.A. Buchanan
- J. Batey
- et al.
- 1988
- IEEE Electron Device Letters
105-GHz Bandwidth Metal-Semiconductor-Metal Photodiode
- Jean-Marc Halbout
- Peter Vettiger
- et al.
- 1988
- IEEE Electron Device Letters
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Unpinned GaAs MOS Capacitors and Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1988
- IEEE Electron Device Letters
High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters