Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.