Recent developments in ST-MRAM, including scaling
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
J.S. Noh, T.K. Nath, et al.
Applied Physics Letters
D.C. Worledge, A. Annunziata, et al.
INTERMAG 2015
Q.Y. Ma, S.H. Hong, et al.
Supercond Sci Technol