Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions
- Conal E. Murray
- Z. Ren
- et al.
- 2009
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.