Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couplesH.-O. BlomS. Berget al.1985JVSTA
Summary Abstract: Titanium silicide films prepared by reactive sputteringV. DelineF.M. d’Heurle1985JVSTA
Stress modification of WSi2.2 films by concurrent low energy ion bombardment during alloy evaporationD.S. YeeJ. Floroet al.1985JVSTA
Effect of ion bombardment during deposition on the x-ray microstructure of thin silver filmsT.C. HuangG. Limet al.1985JVSTA
Properties and Microelectronic Applications of Thin Films of Refractory Metal NitridesMarc Wittmer1985JVSTA
Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar systemK. KehlerJ.W. Coburnet al.1985JVSTA