Optimal dual-VT design in sub-100-nm PD/SOI and double-gate technologies
- Aditya Bansal
- Jae-Joon Kim
- et al.
- 2008
- IEEE Transactions on Electron Devices
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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134 results at IEEE Transactions on Electron Devices
A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2008
- IEEE Transactions on Electron Devices
Threshold voltage variation in SOI Schottky-barrier MOSFETs
- Min Zhang
- Joachim Knoch
- et al.
- 2008
- IEEE Transactions on Electron Devices
Device design and optimization methodology for leakage and variability reduction in sub-45-nm FD/SOI SRAM
- Saibal Mukhopadhyay
- Keunwoo Kim
- et al.
- 2008
- IEEE Transactions on Electron Devices
Improving the performance of superjunction devices having fixed charge in isolation and termination oxide layers
- S. Balaji
- Shreepad Karmalkar
- 2008
- IEEE Transactions on Electron Devices
Reducing ground-bounce noise and stabilizing the data-retention voltage of power-gating structures
- Suhwan Kim
- Chang Jun Choi
- et al.
- 2008
- IEEE Transactions on Electron Devices
Poly-Si thin-film transistors: An efficient and low-cost option for digital operation
- Jing Li
- Aditya Bansal
- et al.
- 2007
- IEEE Transactions on Electron Devices
A simulation study of the switching times of 22- and 17-nm gate-length SOI nFETs on high mobility substrates and Si
- Steven E. Laux
- 2007
- IEEE Transactions on Electron Devices
Low-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2007
- IEEE Transactions on Electron Devices
Random dopant fluctuation in limited-width FinFET technologies
- Meng-Hsueh Chiang
- Jeng-Nan Lin
- et al.
- 2007
- IEEE Transactions on Electron Devices