Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2012
- Japanese Journal of Applied Physics
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129 results at Japanese Journal of Applied Physics
Electron mobility limited by remote charge scattering in thin (100)- and (110)-oriented silicon body double-gated metal-oxide-semiconductor field-effect transistors with high-k gate dielectrics
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2012
- Japanese Journal of Applied Physics
Ultra high density scanning electrical probe phase-change memory for archival storage
- Lei Wang
- C. David Wright
- et al.
- 2011
- Japanese Journal of Applied Physics
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics
Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics
A binary tunnel field effect transistor with a steep sub-threshold swing and increased on current
- Ram Asra
- Kota V. R. M. Murali
- et al.
- 2010
- Japanese Journal of Applied Physics
Effects of excimer irradiation treatment on thermocompression Au-Au bonding
- Naoko Unami
- Katsuyuki Sakuma
- et al.
- 2010
- Japanese Journal of Applied Physics
Integration of photo-patternable low-κ material into advanced Cu back-end-of-the-line
- Qinghuang Lin
- Alshakim Nelson
- et al.
- 2010
- Japanese Journal of Applied Physics