The Formation of SiO2 in an RF Generated Oxygen Plasma: II. The Pressure Range Above 10 mTorrA. RayA. Reisman2019JES
On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated PressureA. ReismanJ.M. Aitkenet al.2019JES
Anomalous Etch Structures Using Ethylenediamine-Pyrocatechol-Water Based Etchants and Their EliminationA. ReismanM. Berkenblitet al.2019JES