Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
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166 results at Journal of Crystal Growth
Recent developments in molecular beam epitaxy
- R.F.C. Farrow
- 1990
- Journal of Crystal Growth
A classification scheme for visual defects arising in semiconductor wafer inspection
- A. Ravishankar Rao
- Ramesh Jain
- 1990
- Journal of Crystal Growth
Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theory
- N.I. Buchan
- J.M. Jasinski
- 1990
- Journal of Crystal Growth
Relationship between crystal growth and physical properties in the high temperature superconductor YBa2Cu3O7-δ
- F. Holtzberg
- C. Feild
- 1990
- Journal of Crystal Growth
Melt motion in a Czochralski puller with a weak transverse magnetic field
- M.G. Williams
- J.S. Walker
- et al.
- 1990
- Journal of Crystal Growth
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Influence of surface morphology upon recovery kinetics during interrupted epitaxial growth
- S. Clarke
- D.D. Vvedensky
- et al.
- 1989
- Journal of Crystal Growth
Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
- H.P. Meier
- E. Van Gieson
- et al.
- 1989
- Journal of Crystal Growth