D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Selective epitaxy is the laterally controlled growth of epitaxial material on a substrate. We have demonstrated the highly selective epitaxial growth of GaAs using diethyl gallium chloride or (C2H5)2GaCl. No GaAs growth is observed on the masking material over a wide range of growth temperatures, 600 ≤T ≤800°C. The edges of the selectively grown GaAs are bounded by the slow growth planes typical of the inorganic based growth techniques. By appropriate pre-growth treatment the electrical properties of the interface between the selectively grown material and the underlying substrate can be made to be very good with no interfacial potential barrier. © 1990.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films