MOVPE on patterned substrates: A new fabrication method for nanometer structure devicesYvan D. GaleuchetHugo Rothuizenet al.1991ESSDERC 1991
GaAs opto-electronic integrated circuits for high speed optical communicationsD.L. Rogers1991ESSDERC 1991
Applications of scanning tunneling microscopy to the characterization of semiconductor technologies and devicesH. SaleminkO. Albrektsen1991ESSDERC 1991
Study of vertical transport through schottky-gated, laterally confined quantum-dot devicesN. BlancP. Guéretet al.1991ESSDERC 1991
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial baseJ.N. BurghartzJ.D. Cressleret al.1991ESSDERC 1991
Strain relaxation in GeSi layers with uniform and graded compositionS.C. JainP. Balket al.1991ESSDERC 1991