High performance long- and short-channel in0.7ga 0.3as-channel MOSFETsYanning SunE.W. Kiewraet al.2008DRC 2008
An equivalent circuit for separable electron streams in a gated dirac transmission lineP. Solomon2008DRC 2008
Top-gated thin film FETs fabricated from arrays of self-aligned semiconducting carbon nanotubesMichael EngelJoshua P. Smallet al.2008DRC 2008
Scaling of high-performance InAs/AlSb/GaSb heterostructure detectors for millimeter-wave and submillimeter-wave sensing and imagingNing SuZ. Zhanget al.2008DRC 2008
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentrationC. SandowJ. Knochet al.2008DRC 2008
Measurement of silicon nanowires carrier mobility and its size dependenceO. GunawanL. Sekaricet al.2008DRC 2008
Chemical doping of graphene nanoribbon field-effect devicesYu-Ming LinDamon B. Farmeret al.2008DRC 2008
Measurements of carrier transport in MOSFETs with bottom-up nanowire channel as a function of the nanowire diameterG.M. CohenS. Bangsaruntipet al.2008DRC 2008
DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETsS.W. BedellA. Majumdaret al.2008DRC 2008