A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
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8 results at VLSI Technology 1990
Mobile ion gettering in passivated P+ polysilicon gates
- C.Y. Wong
- C.C.-H. Hsu
- et al.
- 1990
- VLSI Technology 1990
Role of surface passivation in the integrated processing of MOS structures
- M. Offenberg
- M. Liehr
- et al.
- 1990
- VLSI Technology 1990
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
A high-performance 0.5-μm BiCMOS technology with 3.3-V CMOS devices
- Eric D. Johnson
- T.B. Hook
- et al.
- 1990
- VLSI Technology 1990
Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors
- Joachim N. Burghartz
- Jack Y.-C. Sun
- et al.
- 1990
- VLSI Technology 1990