First-principles calculations of diffusion constants in silicon
- Peter E. Bloechl
- C.G. Van de Walle
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
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6 results at Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Stress-driven segregation at a Si-Ge alloy surface
- J. Tersoff
- P.C. Kelires
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Surface processes in plasma-assisted etching
- J.W. Coburn
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Damage enhanced diffusion
- Alwin E. Michel
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Mechanisms and models of Si film growth from SiH4 and Si2H6
- S. Gates
- S.K. Kulkarni
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Passivation of dopants in ion implanted and rapid thermally annealed GaAs in H+ plasma environment
- J.P. de Souza
- D.K. Sadana
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990