Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling TrendsErnest WuPaul Jamisonet al.2025IRPS 2025
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet DevicesH. ZhouM. Hasanuzzamanet al.2025IRPS 2025
New Loss Function for Learning Dielectric Thickness Distributions and Generative Modeling of Breakdown LifetimeWeiman YanErnest Wuet al.2025IRPS 2025
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate DielectricsErnest Y. WuRichard G. Southwicket al.2025IRPS 2025
A systematic study of temperature, polarity, thickness, and ramp rate dependencies of ramp-voltage stress for SiO2 and its comparison with 2D gate dielectricsErnest Y WuRichard G. Southwicket al.2025IRPS 2025