Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOxReRAMT. StecconiY. Popoffet al.2022ESSDERC 2022
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser StimulationFranco StellariErnest Y. Wuet al.2022ESSDERC 2022
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applicationsFrancesco Serra Di Santa MariaChristoforos Theodorouet al.2022ESSDERC 2022