Graphene-based fast electronics and optoelectronics
- Ph. Avouris
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
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14 results at IEDM 2010
Device, circuit and system-level analysis of noise in multi-bit phase-change memory
- Gael F. Close
- Urs Frey
- et al.
- 2010
- IEDM 2010
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
High on-off ratio bilayer graphene complementary field effect transistors
- Kausik Majumdar
- Kota V. R. M. Murali
- et al.
- 2010
- IEDM 2010
Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates
- Shu-Jen Han
- Josephine Chang
- et al.
- 2010
- IEDM 2010
Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010