Frederic Holtzberg, Arnold Reisman, et al.
JACS
This paper attempts to provide a technical perspective for a 1µm MOSFET VLSI technology described in the technical papers that follow. Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections and radiation effects. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
Frederic Holtzberg, Arnold Reisman, et al.
JACS
Arnold Reisman
Proceedings of the IEEE
William R. Hunter, Linda Ephrath, et al.
IEEE T-ED
Arnold Reisman, Joan Mineo
Journal of Physical Chemistry