Tak H. Ning, Peter W. Cook, et al.
IEEE JSSC
An approach is described for determining the hot-electron- voltages for silicon MOSFET’s of small dimensions. The approach was followed in determining the room-temperature and the 77 K hot-electron-limited voltages for a device designed to have a minimum channel length of 1 μm. The substrate hot-electron limits were determined empirically from measurements of the emission probabilities as a function of voltage using devices of reentrant geometry. The channel hot-electron limits were determined empirically from measurements of the injection current as a function of voltage Ind from long-term stress experiments. For the 1 μm design considered, the channel hot-electron limits are lower than the substrate hot-election limits. The maximum voltage, VDS VGs, = is 4.75 V at room temperature (25°C) and 3.5 V at 77 K. More details of the voltage limits as well as the approach for determining them are discussed. Examples of circuits designed with these devices to operate within these hot-electron voltage limits are also discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
Tak H. Ning, Peter W. Cook, et al.
IEEE JSSC
Tak H. Ning, Denny D. Tang
Proceedings of the IEEE
Charles C.-H. Hsu, Duen-Shun Wen, et al.
IEEE Transactions on Electron Devices
Pouya Hashemi, Jeng-Bang Yau, et al.
S3S 2017