Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1̄1̄1̄) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1̄1̄1̄) surface it is shown that the As-vacancy model is unlikely and other geometries are considered. © 1986 The American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
A. Krol, C.J. Sher, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics