Leonardo Massai, Bence Hetényi, et al.
Communications Materials
A 300mm cold-wall UHVZCVD reactor was used to grow epitaxial silicon layers on (100) SOI wafers at 500 to 800 °C using disilane, silane, and mixtures thereof. Spectroscopic ellipsometry was utilized to measure the deposition rates and wafer uniformities after growth, and high-resolution atomic force microscopy was employed to extract surface roughness and assess step flow growth. In the massflow controlled deposition region, both disilane and silane resulted in a linear dependence of growth rate on gas flow where disilane dominated over silane. In the reaction-limited regime, both precursors exhibited a perfect rate limitation with activation energies of ≈ 2 eV. Unlike in RPCVD, the deposition rate of disilane was found to approach twice that of silane at lowest temperatures. Step-flow growth was maintained even after 1μm of silicon was deposited under high-rate conditions. Additionally, continuous epitaxial films with thickness as low as 4 Å were also obtained. ©The Electrochemical Society.
Leonardo Massai, Bence Hetényi, et al.
Communications Materials
Alexander Reznicek, Thomas N. Adam, et al.
ISTDM 2012
Jeehwan Kim, Stephen W. Bedell, et al.
Applied Physics Letters
Conal E. Murray, Stephen W. Bedell, et al.
Journal of Applied Physics