Low-temperature epitaxial growth of Si, SiGe, Ge, and SiC in a 300mm UHV/CVD reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
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6 results for Sanjay R. Shinde
300mm cold-wall UHV/CVD reactor for low-temperature epitaxial (100) silicon
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth