A fully anlytical model for carbon nanotube FETs including quantum capacitances and electrostatics

Abstract

In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential physics, such as the drain-induced-barrier- lowing (DIBL) and quantum capacitances, are captured with a reasonable accuracy compared with numerical simulations. The model facilitates fast circuit simulation and system optimization.