R.H. Dennard
IEEE T-ED
Paper
A hardened field insulator
Abstract
In this paper we report results on a new hardened field oxide which exhibits improved resistance to ionizing radiation. This new field insulator shows much less radiation-induced shift in flatband voltage than that of ordinary SiO2 (either thermally grown or chemically vapor deposited). Results are obtained over a range of bias conditions (-10 volts to +22.5 volts) and radiation dosage (0 ~ 4 × 104 rads (SiO2))· © 1981 IEEE. All rights reserved.
Related
Conference paper
Scalability and biasing strategy for CMOS with active well bias
S. Huang, C. Wann, et al.
VLSI Technology 2001
Conference paper
Iddq testing for high performance CMOS - The next ten years
T.W. Williams, R. Kapur, et al.
EDTC 1996
G. Baccarani, M.R. Wordeman, et al.
IEEE T-ED