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PaperHot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray LithographyC.C.-H. Hsu, L.K. Wang, et al.IEEE Electron Device Letters
Conference paperA comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETsC.C.-H. Hsu, D.S. Wen, et al.IEDM 1989