Stanisław Woźniak, Hlynur Jónsson, et al.
Nature Communications
We present a new selector only memory material, CuGeSe, with low program current and fast switch speed properties. The switching mechanism is studied in depth and element migration is verified during the switching of the material. We also discuss application of the material for 3D Xpoint and 3D vertical memory, as well as propose a modified 1/3 V testing scheme for 3D vertical memory to mitigate leakage current and improve scaling.
Stanisław Woźniak, Hlynur Jónsson, et al.
Nature Communications
Claudio Santos Pinhanez, Edem Wornyo
CHI 2025
Takayuki Osogami, Segev Wasserkrug, et al.
IJCAI 2023
Laura Bégon-Lours, Elisabetta Morabito, et al.
MRS Fall Meeting 2023