C. Coïa, C. Lavoie, et al.
ECS Meeting 2005
The characteristics of carbon nanotube field-effect transistors (CNFFTs) made of s-single-wall carbon nanotubes (SWNTs) contacted to titanium carbide (TiC) and passivated with a uniform SiO2 layer were determined. It was found that the apparent barrier height for carrier injection is modulated by the gate field. Furthermore, it was observed that the usual p-type character of CNFETs is a property of the nanotube-metal junction.
C. Coïa, C. Lavoie, et al.
ECS Meeting 2005
H. Stahl, J. Appenzeller, et al.
Materials Science and Engineering C
K.N. Chen, L. Krusin-Elbaum, et al.
NVSMW 2006
V. Svilan, K.P. Rodbell, et al.
Journal of Electronic Materials