L. Clevenger, C. Cabral Jr., et al.
MRS Fall Meeting 1995
The shapes of the recrystallization fronts observed during solid phase epitaxy (SPE) in line-shaped amorphized Si (a-Si) regions in single-crystal (001) and (011) Si are shown to exhibit a complex time evolution inconsistent with simple models in which regrowth behavior is determined exclusively by the competition between fixed-growth-rate lateral and vertical SPE. We find that the main features of our data for 〈110〉-aligned a-Si lines may be explained by the propensity of the lateral and vertical growth fronts to form stable a-Si {111} interfaces at their edges. These same a-Si {111} interfaces have been previously implicated as the root cause of the trench-edge defects produced during the recrystallization of patterned a-Si regions bounded laterally by oxide-filled trenches. An extension of a nanofacet model recently developed to explain the trench-edge defects is shown to explain many of the observed recrystallization behaviors. © 2007 American Institute of Physics.
L. Clevenger, C. Cabral Jr., et al.
MRS Fall Meeting 1995
A. Reznicek, S.W. Bedell, et al.
IEEE International SOI Conference 2004
Conal E. Murray, K.L. Saenger
Journal of Applied Physics
A. Grill, V.V. Patel, et al.
MRS Fall Meeting 1996