High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Publications
Date
Featured collections
Popular topics
21 results for Haizhou Yin
Will SOI have a life for the low-power market?
- Jin Cai
- Zhibin Ren
- et al.
- 2008
- IEEE International SOI Conference 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007