T.H. Distefano, G.D. Pettit, et al.
Applied Physics Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
T.H. Distefano, G.D. Pettit, et al.
Applied Physics Letters
B. Chen, A.S. Yapsir, et al.
ICSICT 1995
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987