Conference paper
Base recombination in high performance InGaAs/InP HBTs
C.W. Seabury, C.W. Farley, et al.
Device Research Conference 1993
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
C.W. Seabury, C.W. Farley, et al.
Device Research Conference 1993
I.M. Vitomirov, A. Raisanen, et al.
Journal of Electronic Materials
G. Shahidi, A. Ajmera, et al.
CICC 1999
K.L. Kavanagh, J.C.P. Chang, et al.
Applied Physics Letters