M.D. Pashley, K.W. Haberern, et al.
Physical Review Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
M.D. Pashley, K.W. Haberern, et al.
Physical Review Letters
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED
H.J. Hovel
IEEE T-ED
G.D. Pettit, J. Woodall, et al.
Applied Physics Letters