Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
72 results for Harold J. Hovel
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
- D. Schepis
- F. Assaderaghi
- et al.
- 1997
- IEDM 1997
Effect of the back gate conduction on 0.25 μm SOI devices
- J.L. Pelloie
- D.K. Sadana
- et al.
- 1994
- IEDM 1994
The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: Offering ohmic contact to light trapping
- Jeehwan Kim
- Ahmed Abou-Kandil
- et al.
- 2010
- ACS Nano
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
III-V photovoltaics - Recent developments and prospects
- N. Sosa
- Theodore G. Van Kessel
- et al.
- 2010
- ECS Transactions
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Advanced applications of semiconductor epitaxy for cutting edge integrated circuit technology
- D.K. Sadana
- M. Yang
- et al.
- 2006
- ECS Meeting 2006
Single wafer sSOI by SIMOX
- J.P. De Souza
- S.W. Bedell
- et al.
- 2006
- ISTDM 2006