G.D. Pettit, J. Woodall, et al.
Applied Physics Letters
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
Related
K.L. Kavanagh, J.W. Mayer, et al.
Applied Physics Letters
W.P. Dumke, J. Woodall, et al.
Solid-State Electronics
Conference paper
0.22 μm CMOS-SOI technology with a Cu BEOL
A. Ajmera, J. Sleight, et al.
VLSI Technology 1999