E. Occhiello, F. Garbassi, et al.
Journal of Physics D: Applied Physics
The surface chemistry of silicon bombarded with a CF+3 ion beam has been studied using X-ray photoemission and Auger electron spectroscopy. The chemical species and their depth distribution in a surface exposed to CF+3 ions of different energies (0.5 kV and 2 kV) are analyzed and are related to the etching behavior of silicon. The phenomenon of electron-induced desorption of surface fluorine is examined. XPS binding energies and the relative photoionization cross sections are also determined for a number of Si, C and F containing compounds, and these are used for chemical identification of the surface species. © 1979.
E. Occhiello, F. Garbassi, et al.
Journal of Physics D: Applied Physics
Ingo Hussla, H. Coufal, et al.
Canadian journal of physics
T.J. Chuang, Ingo Hussla, et al.
International Conference on Laser Processing and Diagnostics 1983
H. Seki, T.J. Chuang, et al.
Physical Review B