Yoo-Mi Lee, Myung-Hee Na, et al.
IEDM 2017
Paper
Analysis and modeling of threshold voltage mismatch for CMOS at 65 nm and beyond
Abstract
This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon. © 2008 IEEE.
Related
Tenko Yamashita, S. Mehta, et al.
VLSI Technology 2015
Jun Yuan, C. Gruensfelder, et al.
ICSICT 2010
Sophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.
IEEE Transactions on Electron Devices