PaperModeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuationNauman Z. Butt, Jeffrey B. JohnsonIEEE Electron Device Letters
PaperSiGe-Channel Heterojunction p-MOSFET’sSophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.IEEE Transactions on Electron Devices
PaperModeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETsIshita Jain, Anshul Gupta, et al.IEEE T-ED
PaperHybrid methodology to model random dopant fluctuations in low doped FinFETsSamarth Agarwal, Jeffrey B. Johnson, et al.Journal of Computational Electronics
