Review
FEOL technology trend
Yuan Taur, Tak H. Ning
Materials Chemistry and Physics
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
Yuan Taur, Tak H. Ning
Materials Chemistry and Physics
Wen-Hsing Chang, Bijan Davari, et al.
IEEE T-ED
Yuan Taur
IEEE Transactions on Electron Devices
Yuan Taur, Genda J. Hu, et al.
IEEE T-ED