J.F. Ziegler, B.L. Crowder, et al.
Applied Physics Letters
Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.
J.F. Ziegler, B.L. Crowder, et al.
Applied Physics Letters
B.L. Crowder, G.D. Pettit
Physical Review
J.C. Tsang, M.W. Shafer, et al.
Physical Review B
B.L. Crowder
ICCD 1985