Ion Implantation Doping of Si with 70 to 300 keV B. P. and As

B.L. Crowder, F.F. Morehead Jr.

UNKNOWN

J. De Sousa Pires, P. Ali, et al.

Applied Physics Letters

B.L. Crowder, R.S. Title, et al.

Applied Physics Letters

M.Y. Tsai, H.H. Chao, et al.

JES