Ion Implantation Doping of Si with 70 to 300 keV B. P. and As

C.-Y. Ting, B.L. Crowder

JES

J.F. Ziegler, B.L. Crowder

Applied Physics Letters

B.L. Crowder

ISMSS 1989

B.L. Crowder, R.S. Title, et al.

Applied Physics Letters