B.J. Masters, J.M. Fairfield, et al.
Radiation Effects
Paper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and As
Abstract
No abstract available.
Related
F.F. Morehead, B.L. Crowder
Radiation Effects
W.K. Chu, B.L. Crowder, et al.
Applied Physics Letters
C.-Y. Ting, B.L. Crowder
JES