T.C. Chou, C.Y. Wong, et al.
Journal of Applied Physics
It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.
T.C. Chou, C.Y. Wong, et al.
Journal of Applied Physics
Jae-Woong Nah, Kai Chen, et al.
ECTC 2007
Jian Li, G. Vizkelethy, et al.
Journal of Applied Physics
A.D. Marwick, L. Civale, et al.
Nuclear Inst. and Methods in Physics Research, B