M. Wittmer, P. Oelhafen, et al.
Physical Review B
We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.
M. Wittmer, P. Oelhafen, et al.
Physical Review B
K.Y. Ahn, T.H. Di Stefano, et al.
Journal of Applied Physics
K.N. Tu, G.V. Chandrashekhar, et al.
Thin Solid Films
K.Y. Ahn, K.N. Tu, et al.
Journal of Applied Physics